Technical Specifications of PMZ1000UN,315
| Datasheet |  PMZ1000UN,315 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 1 Ohm @ 200mA, 4.5V |
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| Vgs(th) (Max) @ Id | 950mV @ 250μA |
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| Gate Charge (Qg) @ Vgs | 0.89nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 43pF @ 25V |
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| Power - Max | 350mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-101, SOT-883 |
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| Supplier Device Package | DFN1006-3 |
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