Technical Specifications of TPS1100D
Datasheet | TPS1100D datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Texas Instruments |
Series | - |
Packaging | Tube |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 15V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 791mW |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
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