Technical Specifications of IXTF1R4N450
Datasheet | IXTF1R4N450 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 4500V (4.5kV) |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
Rds On (Max) @ Id, Vgs | 40 Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id | 6V @ 250μA |
Gate Charge (Qg) @ Vgs | 88nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3300pF @ 25V |
Power - Max | 190W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | i4-Pac?-5 (3 leads) |
Supplier Device Package | ISOPLUS i4-PAC? |
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