Technical Specifications of IPS03N03LB G
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 2V @ 70μA |
Gate Charge (Qg) @ Vgs | 40nC @ 5V |
Input Capacitance (Ciss) @ Vds | 5200pF @ 15V |
Power - Max | 115W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Stub Leads, IPak |
Supplier Device Package | PG-TO251-3 |
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