Technical Specifications of SI5463EDC-T1-E3
| Datasheet |  SI5463EDC-T1-E3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Vishay Siliconix |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
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| Rds On (Max) @ Id, Vgs | 62 mOhm @ 4A, 4.5V |
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| Vgs(th) (Max) @ Id | 450mV @ 250μA (Min) |
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| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 1.25W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SMD, Flat Lead |
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| Supplier Device Package | 1206-8 ChipFET? |
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