Technical Specifications of NDD60N550U1-1G
Datasheet | NDD60N550U1-1G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) @ Vds | 540pF @ 50V |
Power - Max | 94W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | IPAK (TO-251) |
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