Technical Specifications of IPB10N03LB G
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 20μA |
Gate Charge (Qg) @ Vgs | 13nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1639pF @ 15V |
Power - Max | 58W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Supplier Device Package | PG-TO263-3 |
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