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IPB180N10S402ATMA1
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Manufacturer Part Number | IPB180N10S402ATMA1 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH TO263-7 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPB180N10S402ATMA1 Price | ![]() |
Technical Specifications of IPB180N10S402ATMA1
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 275μA |
Gate Charge (Qg) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) @ Vds | 14600pF @ 25V |
Power - Max | 300W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Supplier Device Package | PG-TO263-7-3 |