Technical Specifications of ATP112-TL-H
Datasheet | ATP112-TL-H datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Rds On (Max) @ Id, Vgs | 43 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | 33.5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1450pF @ 20V |
Power - Max | 40W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | ATPAK (2 leads+tab) |
Supplier Device Package | ATPAK |
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