Technical Specifications of IXTP2R4N50P
Datasheet | IXTP2R4N50P datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | PolarHV? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
Rds On (Max) @ Id, Vgs | 3.75 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 25μA |
Gate Charge (Qg) @ Vgs | 6.1nC @ 10V |
Input Capacitance (Ciss) @ Vds | 240pF @ 25V |
Power - Max | 55W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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