Technical Specifications of PSMN102-200Y,115
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | TrenchMOS? |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 200V |
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| Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |
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| Rds On (Max) @ Id, Vgs | 102 mOhm @ 12A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 30.7nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 1568pF @ 30V |
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| Power - Max | 113W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-100, SOT-669, 4-LFPAK |
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| Supplier Device Package | LFPAK, Power-SO8 |
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