Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > BSB056N10NN3GXUMA1
BSB056N10NN3GXUMA1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | BSB056N10NN3GXUMA1 |
---|---|
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 100V 9A WDSON-2 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BSB056N10NN3GXUMA1 Price | ![]() |
Technical Specifications of BSB056N10NN3GXUMA1
Datasheet | ![]() |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 100μA |
Gate Charge (Qg) @ Vgs | 74nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5500pF @ 50V |
Power - Max | 78W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Supplier Device Package | MG-WDSON-2, CanPAK M? |