Technical Specifications of GA08JT17-247
Datasheet | GA08JT17-247 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Packaging | Tube |
FET Type | Junction Transistor, Normally Off |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (90°C) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 8A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 16W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247AB |
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