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TPC8018-H(TE12LQM)
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Manufacturer Part Number | TPC8018-H(TE12LQM) |
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Manufacturer | Toshiba Semiconductor and Storage |
Description | MOSFET N-CH 30V 18A SOP8 2-6J1B |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
TPC8018-H(TE12LQM) Price | ![]() |
Technical Specifications of TPC8018-H(TE12LQM)
Category | Discrete Semiconductor Products |
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Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2265pF @ 10V |
Power - Max | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package | 8-SOP (5.5x6.0) |