Technical Specifications of IXFB38N100Q2
Datasheet | IXFB38N100Q2 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | HiPerFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) @ Vgs | 250nC @ 10V |
Input Capacitance (Ciss) @ Vds | 13500pF @ 25V |
Power - Max | 890W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | PLUS264? |
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