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TPC8035-H(TE12L,QM
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Manufacturer Part Number | TPC8035-H(TE12L,QM |
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Manufacturer | Toshiba Semiconductor and Storage |
Description | MOSFET N-CH 30V 18A SOP8 2-6J1B |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
TPC8035-H(TE12L,QM Price | ![]() |
Technical Specifications of TPC8035-H(TE12L,QM
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) @ Vgs | 82nC @ 10V |
Input Capacitance (Ciss) @ Vds | 7800pF @ 10V |
Power - Max | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package | 8-SOP (5.5x6.0) |