Technical Specifications of IPU103N08N3 G
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Rds On (Max) @ Id, Vgs | 10.3 mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 46μA |
Gate Charge (Qg) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2410pF @ 40V |
Power - Max | 100W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | PG-TO251-3 |
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