Technical Specifications of IRFD320
Datasheet | IRFD320 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25°C | 490mA (Ta) |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 210mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 410pF @ 25V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-DIP (0.300", 7.62mm) |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
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