Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPI80N06S4L05AKSA2
IPI80N06S4L05AKSA2
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | IPI80N06S4L05AKSA2 |
---|---|
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH TO262-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPI80N06S4L05AKSA2 Price |
Technical Specifications of IPI80N06S4L05AKSA2
Datasheet | IPI80N06S4L05AKSA2 datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 40A, 4.5V |
Vgs(th) (Max) @ Id | 2.2V @ 60μA |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) @ Vds | 8180pF @ 25V |
Power - Max | 107W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | PG-TO262-3-1 |