Technical Specifications of GT8G133(TE12L,Q)
Category | Discrete Semiconductor Products |
Family | Transistors - IGBTs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 150A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 4V, 150A |
Power - Max | 600mW |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | 1.7μs/2μs |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
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