Technical Specifications of RJH60D5BDPQ-E0#T2
| Datasheet |  RJH60D5BDPQ-E0#T2 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | Trench |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 75A |
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| Current - Collector Pulsed (Icm) | - |
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| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 37A |
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| Power - Max | 200W |
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| Switching Energy | 400μJ (on), 810μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 78nC |
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| Td (on/off) @ 25°C | 50ns/130ns |
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| Test Condition | 300V, 37A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | 25ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247 |
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