Technical Specifications of IXBF50N360
Datasheet | IXBF50N360 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - IGBTs - Single |
Manufacturer | IXYS |
Series | BIMOSFET? |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 3600V |
Current - Collector (Ic) (Max) | 70A |
Current - Collector Pulsed (Icm) | 420A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
Power - Max | 290W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 46ns/205ns |
Test Condition | 960V, 50A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | 1.7μs |
Package / Case | i4-Pac?-5 (3 leads) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS i4-PAC? |
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