Technical Specifications of NGTB50N60S1WG
| Datasheet |  NGTB50N60S1WG datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | Trench |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 100A |
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| Current - Collector Pulsed (Icm) | 200A |
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| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
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| Power - Max | 417W |
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| Switching Energy | 1.5mJ (on), 460μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 220nC |
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| Td (on/off) @ 25°C | 100ns/237ns |
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| Test Condition | 400V, 50A, 10 Ohm, 15V |
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| Reverse Recovery Time (trr) | 94ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247-3 |
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