Technical Specifications of IXDR35N60BD1
| Datasheet |  IXDR35N60BD1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | NPT |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 38A |
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| Current - Collector Pulsed (Icm) | 48A |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
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| Power - Max | 125W |
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| Switching Energy | 1.6mJ (on), 800μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 140nC |
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| Td (on/off) @ 25°C | - |
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| Test Condition | 300V, 35A, 10 Ohm, 15V |
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| Reverse Recovery Time (trr) | 40ns |
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| Package / Case | ISOPLUS247? |
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| Mounting Type | Through Hole |
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| Supplier Device Package | ISOPLUS247? |
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