Technical Specifications of MV2N5116
| Datasheet |  MV2N5116 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - JFETs |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500 |
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| Packaging | * |
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| FET Type | P-Channel |
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| Voltage - Breakdown (V(BR)GSS) | 30V |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 15V |
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| Current Drain (Id) - Max | - |
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| Voltage - Cutoff (VGS off) @ Id | 6V @ 1nA |
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| Input Capacitance (Ciss) @ Vds | 27pF @ 15V |
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| Resistance - RDS(On) | 100 Ohm |
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| Mounting Type | * |
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| Package / Case | * |
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| Supplier Device Package | * |
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| Power - Max | 500mW |
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