Technical Specifications of TK8Q65W,S1Q
Datasheet | TK8Q65W,S1Q datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta) |
Rds On (Max) @ Id, Vgs | 670 mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 300μA |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) @ Vds | 570pF @ 300V |
Power - Max | 80W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Stub Leads, IPak |
Supplier Device Package | I-Pak |
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