Technical Specifications of TPC8109(TE12L)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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| Rds On (Max) @ Id, Vgs | 20 mOhm @ 5A, 10V |
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| Vgs(th) (Max) @ Id | 2V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 2260pF @ 10V |
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| Power - Max | - |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
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| Supplier Device Package | 8-SOP (5.5x6.0) |
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